Model No: IN-5484

Once Again, A New Evolution

Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.

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Description

Pellentesque habitant morbi tristique senectus et netus et malesuada fames ac turpis egestas. Vestibulum tortor quam, feugiat vitae, ultricies eget, tempor sit amet, ante. Donec eu libero sit amet quam egestas semper. Aenean ultricies mi vitae est. Mauris placerat eleifend leo.

Material properties

project

Specification

Detection method

growth pattern

Czochralski

--

Crystallinity

single crystal

--

Conductivity type

P type

P/N type tester

size

M10：182.2*182.2*φ247mm G12： 210*210*φ295mm

Silicon wafer automatic inspection equipment

thickness

M10：150±10µm 140±10µm G12：150±10µm

Silicon wafer automatic inspection equipment

Electrical properties

project

Specification

Detection method

Resistivity

0.4-1.1 Ω.cm

Silicon wafer automatic inspection equipment

Life span of young children

≥70μs

Quasi-steady-state photoconductivity attenuation method/transient photoconductivity attenuation method Injection level: 1E15 cm⁻³ (Sinton BCT-400)

oxygen content

≤7.5E+17 at/cm³

Fourier transform infrared spectrometer

Carbon content

≤ 5E+16 at/cm³

Fourier transform infrared spectrometer